UMF9N transistors 1/5 power management (dual transistors) UMF9N 2sc5585 and 2sk3019 are housed independently in a umt package. ! ! ! ! application power management circuit ! ! ! ! features 1) power switching circuit in a single package. 2) mounting cost and area can be cut in half. ! ! ! ! structure silicon epitaxial planar transistor ! ! ! ! equivalent circuits tr2 tr1 (1) (2) (3) (4) (5) (6) ! ! ! ! packaging specifications UMF9N umt6 f9 tr 3000 type package marking code basic ordering unit (pieces) ! ! ! ! external dimensions (units : mm) rohm : umt6 eiaj : sc-88 0 ~ 0.1 ( 6 ) 2.0 1.3 0.9 0.15 0.7 0.1min. 2.1 0.65 0.2 1.25 ( 1 ) 0.65 ( 4 ) ( 3 ) ( 2 ) ( 5 ) each lead has same dimensions
UMF9N transistors 2/5 ! ! ! ! absolute maximum ratings (ta=25 c) tr1 parameter symbol v cbo v ceo v ebo i c i cp p c tj tstg limits 15 12 6 500 150(total) 150 ? 55~ + 150 1.0 ? 1 ? 2 unit v v v ma a mw c c collector-base voltage collector-emitter voltage emitter-base voltage collector current power dissipation junction temperature range of storage temperature ? 1 single pulse p w =1ms ? 2 120mw per element must not be exceeded. each terminal mounted on a recommended land. tr2 parameter ? 1 p w 10ms duty cycle 50% ? 2 120mw per element must not be exceeded. each terminal mounted on a recommended land. symbol v dss v gss i d i drp p d tch tstg limits 30 20 100 200 150(total) 150 ? 55~ + 150 ? 1 ? 1 ? 2 unit v v ma i dp 200 ma ma i dr 100 ma mw c c drain-source voltage gate-source voltage drain current reverse drain current total power dissipation channel temperature range of storage temperature continuous continuous pulsed pulsed ! ! ! ! electrical characteristics (ta=25 c) tr1 parameter symbol min. typ. max. unit conditions v cb = 10v, i e = 0ma, f = 1mhz transition frequency f t ? 320 ? mhz v ce = 2v, i e =? 10ma, f = 100mhz bv ceo 12 ?? v i c = 1ma collector-emitter breakdown voltage bv cbo 15 ?? v i c = 10 a collector-base breakdown voltage bv ebo 6 ?? v i e = 10 a emitter-base breakdown voltage i cbo ?? 100 na v cb = 15v collector cut-off current i ebo ?? 100 na v eb = 6v emitter cut-off current v ce(sat) ? 100 250 mv i c = 200ma, i b = 10ma collector-emitter saturation voltage h fe 270 ? 680 ? v ce = 2v, i c = 10ma dc current gain cob ? 7.5 ? pf collector output capacitance tr2 parameter symbol min. typ. max. unit conditions input capacitance c iss ? 13 ? pf v ds = 5v, v gs = 0v, f = 1mhz i gss ?? 1 a v gs = 20v, v ds = 0v gate-source leakage v (br)dss 30 ?? v i d = 10 a, v gs = 0v i dss ?? 1.0 a v ds = 30v, v gs = 0v zero gate voltage drain current drain-source breakdown voltage v gs(th) 0.8 ? 1.5 vv ds = 3v, i d = 100 a gate-threshold voltage r ds(on) ? 58 ? i d = 10ma, v gs = 4v ? 713 ? i d = 1ma, v gs = 2.5v static drain-source on-state resistance c oss ? 9 ? pf output capacitance |y fs | 20 ?? ms v ds = 3v, i d = 10ma forward transfer admittance c rss ? 4 ? pf reverce transfer capacitance rise time t r ? 35 ? ns t d(off) ? 80 ? ns turn-off delay time t d(on) ? 15 ? ns i d = 10ma, v dd 5v, v gs = 5v, r l = 500 ? , r gs = 10 ? turn-on delay time t f ? 80 ? ns fall time
UMF9N transistors 3/5 ! ! ! ! electrical characteristic curves tr1 fig.1 grounded emitter propagation characteristics 0 1 100 1000 10 base to emitter voltage : v be (v) collector current : i c (ma) 1.4 1.0 1.2 0.4 0.6 0.8 0.2 v ce =2v pulsed ta=125 c ta=25 c ta= ? 40 c 1 10 100 1000 collector current : i c (ma) fig.2 dc current gain vs. collector current 1 dc current gain : h fe 10 1000 100 ta = 125 c ta =? 40 c ta = 25 c v ce = 2v pulsed fig.3 collector-emitter saturation voltage vs. collector current ( ) 1 10 100 1000 collector current : i c (ma) 1 collector saturation voltage : v ce(sat) (mv) 10 1000 100 ta=25 c pulsed i c /i b = 50 i c /i b = 20 i c /i b = 10 fig.4 collector-emitter saturation voltage vs. collector current ( ? ) 1 10 100 1000 collector current : i c (ma) 1 collector saturation voltage : v ce (sat) (v) 10 1000 100 ta= 1 25 c 25 c ? 40 c i c /i b = 20 pulsed 1 10 100 1000 collector current : i c (ma) fig.5 base-emitter saturation voltage vs. collector current 10 baser saturation voltage : v be (sat) (mv) 100 10000 1000 ta = 25 c ta =? 40 c ta = 125 c i c /i b = 20 pulsed fig.6 gain bandwidth product vs. emitter current 1 10 100 1000 emitter current : i e (ma) 1 transition frequency : f t (mhz) 10 1000 100 v ce = 2v ta = 25 c pulsed fig.7 collector output capacitance vs. collector-base voltage emitter input capacitance vs. emitter-base voltage 1 10 100 0.1 1 10 100 1000 ta = 25 c f = 1mhz i e = 0a collector output capacitance : cob (pf) emitter input capacitance : cib (pf) emitter to base voltage : v eb ( v) cib cob 0.01 0.1 1 10 100 emitter current : v ce (v) fig.8 safe operation area 0.001 transition frequency : i c (a) 0.01 10 0.1 1 ta = 25 c single pulsed dc 100ms 10ms 1ms
UMF9N transistors 4/5 tr2 04 0.1m 100m drain current : i d (a) gate-source voltage : v gs (v) 1 10m 3 2 1m 0.2m 0.5m 2m 5m 50m 20m 200m ta = 125 c 75 c 25 c ? 25 c v ds = 3v pulsed fig.9 typical transfer characteristics ? 50 0 0 1 1.5 2 gate threshold voltage : v gs(th) (v) channel temperature : tch ( c) 0.5 ? 25 25 50 75 100 125 150 fig.10 gate threshold voltage vs. channel temperature v ds = 3v i d = 0.1ma pulsed 0.001 1 2 50 static drain-source on-state resistance : r ds(on) ( ? ) drain current : i d (a) 0.5 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 5 10 20 fig.11 static drain-source on-state resistance vs. drain current ( ) ta = 125 c 75 c 25 c ? 25 c v gs = 4v pulsed 0.001 1 2 50 static drain-source on-state resistance : r ds(on) ( ? ) drain current : i d (a) 0.5 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 5 10 20 fig.12 static drain-source on-state resistance vs. drain current ( ? ) ta = 125 c 75 c 25 c ? 25 c v gs = 2.5v pulsed 0 5 10 15 20 0 5 10 15 gate-source voltage : v gs (v) i d = 0.1a static drain-source on-state resistance : r ds(on) ( ? ) fig.13 static drain-source on-state resistance vs. gate-source voltage ta = 25 c pulsed i d = 0.05a ? 50 0 25 150 0 3 6 9 channel temperature : tch ( c) static drain-source on-state resistance : r ds(on) ( ? ) ? 25 50 75 100 125 2 1 4 5 7 8 fig.14 static drain-source on-state resistance vs. channel temperature v gs = 4v pulsed i d = 100ma i d = 50ma 0.0001 0.001 0.01 0.02 0.5 forward transfer admittance : |yfs| (s) drain current : i d (a) 0.005 0.0002 0.0005 0.001 0.002 0.005 0.01 0.02 0.05 0.05 0.1 0.2 0.1 0.2 0.5 0.002 ta =? 25 c 25 c 75 c 125 c v ds = 3v pulsed fig.15 forward transfer admittance vs. drain current 200m reverse drain current : i dr (a) source-drain voltage : v sd (v) 1.5 1 0.5 0 100m 50m 20m 10m 5m 2m 1m 0.5m 0.2m 0.1m fig.16 reverse drain current vs. source-drain voltage ( ) v gs = 0v pulsed ta = 125 c 75 c 25 c ? 25 c 200m reverse drain current : i dr (a) source-drain voltage : v sd (v) 1.5 1 0.5 0 100m 50m 20m 10m 5m 2m 1m 0.5m 0.2m 0.1m fig.17 reverse drain current vs. source-drain voltage ( ? ) ta = 25 c pulsed v gs = 4v 0v
UMF9N transistors 5/5 0.1 1 2 50 capacitance : c (pf) drain-source voltage : v ds (v) 0.5 0.2 0.5 1 2 5 10 20 50 5 10 20 fig.18 typical capacitance vs. drain-source voltage c iss c oss c rss ta = 25 c f = 1mh z v gs = 0v 0.1 10 20 500 swithing time : t (ns) drain current : i d (ma) 5 0.2 0.5 1 2 5 10 20 50 50 100 200 1000 2 100 ta = 25 c v dd = 5v v gs = 5v r g = 10 ? pulsed t d(off) t r t d(on) t f fig.19 switching characteristics
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